马远骁

准聘教授/博导

院长助理

办公电话：010-6891xxxx

电子邮件：yxma@bit.edu.cn

办公地点：4号教学楼

所在学科

集成电路科学与工程

电子科学与技术

研究方向

超宽带隙氧化物半导体、功率器件与集成应用

高k栅氧化物器件

忆阻器（memristor）与选通器（selector）

半导体器件工艺，EDA设计

教育工作经历

2022/3-至今，澳门太阳游戏城app，太阳成集团tyc4633，准聘教授/博导

2019/12-2021/8，澳门太阳游戏城app，信息与电子学院，助理教授/特别副研究员

2015/09-2019/08，香港大学，电机电子工程系，博士

2013/09-2015/06, 诺丁汉大学（英国）, 电力电子工程系, 硕士（一等学位）（北航学院公派）

2010.09-2015.06，北京航空航天大学，电子信息工程学院，本科

部分代表性论著

(1) Zi Chun Liu, Yuan Xiao Ma,* Yeliang Wang,* et al. “Ultrathin Sn-doped Ga2O3 for Power Field-Effect Transistors: Si-compatible 4-inch array with high-k gate dielectric”, Science Bulletin, 2024 (Online, In Press).

(2) Han Yang, Yuan Xiao Ma,* Yeliang Wang,* et al. “Sn-doped β-Ga2O3 thin films grown on off-axis sapphire substrates by LPCVD using Ga-Sn alloy solid source”, Physica Scripta, vol.99, no.6, 5417, May 2024.

(3) Zi Chun Liu, Yuan Xiao Ma,* Yeliang Wang,* et al. “4-inch Gallium Oxide FETs Array with High-k Ta2O5 as Gate Dielectric by Physical Vapor Deposition”, Physica Status Solidi (RRL) - Rapid Research Letters, 2400046, 2024 (Online, In Press).

(4) Jia Cheng Li, Yuan Xiao Ma,* Yeliang Wang,* et al. “1-Selector 1-Memristor Configuration with Multifunctional a-IGZO Memristive Devices Fabricated at Room Temperature”, ACS Applied Materials & Interfaces, 16, 14, 17766–17777, 27 March, 2024.

(5) Yuan Xiao Ma, Hui Su, Wing Man Tang, Pui To Lai, “Review on remote phonon scattering in transistors with metal-oxide-semiconductor structures adopting high-k gate dielectrics”, Journal of Vacuum Science & Technology B, 41, 2023. (Featured)

(6) An Huang, Yuan Xiao Ma*, Yeliang Wang, * et al., “Room-temperature-processed synaptic a-IGZO TFT with high-k HfLaO gate dielectric as neuromodulator”, Semiconductor Science and Technology, 38, 115003, 2023.

(7) Yuan Xiao Ma, Qing He Wang, Haining Cheng, Pui To Lai* and Wing Man Tang*, “NdxHf(1-x)ON as Gate Dielectric for High-Performance Pentacene OTFTs”, Physica Status Solidi (RRL) - Rapid Research Letters, 2300049, March 2023.

(8) Yuan Xiao Ma, Pui To Lai* and Wing Man Tang*, “Low-Threshold Pentacene OTFT by using NdTaON Gate Dielectric and ITO Gate Electrode”, Applied Surface Science, vol. 605, pp. 154611, 18 March 2022.

(9) Y. X. Ma, W. M. Tang*, and P. T. Lai*, “Improved Carrier Mobility of Pentacene Organic TFTs by Suppressed Oxide Growth at Remote Interface using Nitrogen Doping in High-k NdNbO Dielectric”, Organic Electronics, vol. 102, 106427, 28 December 2021.

(10) Y. X. Ma, H. Su, W. M. Tang*, and P. T. Lai*, “Plasmon-phonon resonance at gate-electrode gate-dielectric interface on carrier mobility or organic TFTs with high-k gate dielectrics”, Applied Surface Science, vol. 565, 150374, 15 June 2021.

(11) Y. X. Ma, C. Y. Han, W. M. Tang*, and P. T. Lai*,“Reduced Screening of Remote Phonon Scattering in Thin-Film Transistors Caused by Gate-Electrode/Gate-Dielectric Interlayer”, Applied Physics Letters, 117, 14，2020.

(12) Yuan Xiao Ma, Hui Su, Wing Man Tang* and Pui To Lai*, “Gate Screening on Remote Phonon Scattering for Pentacene Organic TFTs: Holes versus Electrons”, IEEE Electron Device Letters, 40, 893-896, April 2019.

(13) Yuan Xiao Ma, Wing Man Tang* and Pui To Lai*, “Effects of a Gate-Electrode/Gate-Dielectric Interlayer on Carrier Mobility for Pentacene Organic Thin-Film Transistors”, IEEE Electron Device Letters, 39, 1516-1519, August 2018.

(14) Yuan Xiao Ma, Chuan Yu Han, Wing Man Tang and Pui To Lai*, “Effects of Gate Electron Concentration on the Performance of Pentacene Organic Thin-Film Transistors”, IEEE Electron Device Letters, 39, 963-966, May 2018.

(15) Yuanxiao Ma, Wing Man Tang, Chuanyu Han and Pui To Lai*,“High-Performance Organic Thin-Film Transistor by using Nd2O3 Gate Dielectric doped with Nb”, Physica Status Solidi A: Applications and Materials Science, 215, 1700609, January 2018.

(16) Y. X. Ma, C. Y. Han, W. M. Tang, and P. T. Lai*,“High-Performance Pentacene OTFT by Incorporating Ti in LaON Gate Dielectric”, Applied Physics Letters, 111, 3501-3505, July 2017.

(17) Hui. Su, Yuan Xiao Ma, Pui To Lai, and Wing Man Tang, “Influence of Gate Doping Concentration on the Characteristics of Amorphous InGaZnO Thin-Film Transistors With HfLaO Gate Dielectric”, IEEE Electron Device Letters, 40, 1953-1956, October 2019.

(18) Chuan Yu Han, Yuan Xiao Ma, Wing Man Tang, Xiao Li Wang and Pui To Lai*, “A Study on Organic Thin-Film Transistors Using Hf-La Oxides with Different La Contents as Gate Dielectrics”, IEEE Transactions on Electron Devices, 65, 1107-1112, Feb 2018.

(19) Chuan Yu Han, Yuan Xiao Ma, Wing Man Tang, Xiao Li Wang, Pui To Lai*, “A Study on Pentacene Organic Thin-Film Transistor with Different Gate Materials on Various Substrates”, IEEE Electron Device Letters, 38, 744-747, April 2017.

研究成果

6年海外经历，具有物理电子学、微电子学、电子通信工程等交叉专业背景；主持并参与海内外多个前沿项目，主要从事宽带隙氧化物半导体以及结合高k的功率器件、忆阻器等器件构筑与集成的研究工作，以独立第一作者或通讯作者在包括Science Bulletin，ACS AMI，IEEE EDL,  APL等微电子器件领域的国际权威期刊和会议上发表论文近三十篇，并发明专利近十项。讲授《电路分析基础》本科专业基础课程。

主持课题

主持包括国家重点研发项目（青年科学家）、国家级青年人才项目、国家自然科学基金青年项目、“北京市青托”、中国博士后科学基金特别资助、面上项目等纵向项目6项；另外作为主要参与人参与香港UGC科研项目3项。

荣获奖项

国家重点研发计划青年首席科学家

国家级青年人才

“北京市青年人才托举工程”

北京市“千人进千企”特派员

华为“火花奖”

香港大学电子系优秀助教

High Flier Award, The University of Nottingham (UK)

北京航空航天大学优秀毕业生

学术兼职

APL、JPCL等期刊审稿人